PART |
Description |
Maker |
BLM8G0710S-45AB-15 |
LDMOS 2-stage power MMIC
|
NXP Semiconductors
|
BLM7G1822S-80AB-15 |
LDMOS 2-stage power MMIC
|
NXP Semiconductors
|
BLM7G1822S-40PB-15 |
LDMOS 2-stage power MMIC
|
NXP Semiconductors
|
CGY93 |
GSM 2 stage Power Amplifier MMIC GaAs MMIC From old datasheet system
|
INFINEON[Infineon Technologies AG]
|
MW5IC970NBR1 |
RF LDMOS Wideband 2-Stage Power Amplifiers
|
FREESCALE[Freescale Semiconductor, Inc]
|
CGY181 |
PCN/PCS 2 stage Power Amplifier MMIC
|
Infineon
|
BLF6G27S-4508 BLF6G27S-45 BLF6G27-45 |
Product description45 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. WiMAX power LDMOS transistor
|
NXP Semiconductors N.V.
|
BLF6G27LS-75 BLF6G27-75 |
Product description75 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz WiMAX power LDMOS transistor S BAND, Si, N-CHANNEL, RF POWER, MOSFET 75 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. BLF6G27-75<SOT502A (LDMOST)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
Q68000-A8882 CGY180 |
Power Amplifier (DECT, PCS) From old datasheet system GaAs MMIC (Power amplifier for DECT and PCS application Fully integrated 3 stage amplifier Operating voltage range: 2.7 to 6 V)
|
Infineon SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
BLF871S112 BLF871-15 |
A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. UHF power LDMOS transistor
|
NXP Semiconductors N.V.
|
LB421-14 |
RF POWER LDMOS TRANSISTOR SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|